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CMOS Digital Pixel Sensors With In-Pixel Analog-To-Digital Conversion

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posted on 2021-05-23, 12:33 authored by Yong Chen
This thesis deals with the designing of CMOS image sensors with in-pixel analog-to-digital conversion. A 2-stage memory write scheme for Pulse-Width-Modulation digital pixel sensors is proposed. It utilizes the characteristics of Gray-code counters and partitions a single data write operation into two separated write operations such that the size of the in-pixel memory can be significantly reduced. A Pulse-Frequency-Modulation pixel significantly reduces the integration time without sacrificing the dynamic range. Finally, a Pulse-Frequency-Modulation Digital Pixel Sensor with an in-pixel variable reference voltage is proposed. As compared with conventional Pulse-Frequency-Modulation pixels, the proposed architecture improves the dynamic range by adaptively adjusting the reference voltage in the pixel. All proposed digital pixel sensors are designed in TSMC-0.18μm 6-Metal 1-Poly 1.8 V CMOS technology and analyzed using Spectre from Cadence Design Systems with BSIM3V3 device models. The effectiveness of the proposed digital pixel sensors is validated using simultation.

History

Language

English

Degree

  • Master of Applied Science

Program

  • Electrical and Computer Engineering

Granting Institution

Ryerson University

LAC Thesis Type

  • Thesis

Thesis Advisor

Fei Yuan Gul N. Khan

Year

2008

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    Electrical and Computer Engineering (Theses)

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