Toronto Metropolitan University
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Direct patterning of silicon oxide on Si-substrate induced by femtosecond laser

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posted on 2022-12-16, 16:22 authored by Amirkianoosh Kiani, Krishnan Venkatakrishnan, Bo TanBo Tan

In this study we report for the first time a method for direct patterning of silicon oxide on a silicon substrate by irradiation with a femtosecond laser of Mega Hertz pulse frequency under ambient condition. Embossed lines of silicon oxide with around 3~4 µm width and less than 100 nm height were formed by controlling the parameters such as laser pulse power and frequency rate. A Scanning Electron Microscope (SEM), an optical microscopy and a Micro-Raman and Energy Dispersive X-ray (EDX) spectroscopy were used to analyze the silicon oxide layer.

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